PDEU69A8Y Datasheet, Potens semiconductor

* 60V,300mA, RDS(ON) =3Ω@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available D S G G S Applications
* Notebook
* L.

SOT523 Pin Configuration D BVDSS 60V RDSON 3 ID 300mA Features
* 60V,300mA, RDS(ON) =3Ω@VGS = 10V
* Impr.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.